SMC-0008
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Deskripsi:
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Berbeda dengan Transistor BJT yang beroperasi dengan memanfaatkan arus, MOSFET beroperasi dengan memanfaatkan tegangan. Ketika ada beda tegangan di Gate-Source nya, arus akan mengalir dari Drain ke Source. Sifat MOSFET ini seperti potensiometer yang resistansi nya diatur melalui VGS. VGS makin mendekati threshold-nya, resistansinya makin kecil, dan sebaliknya.

Sangat cocok digunakan sebagai switch digital karena bisa mengalirkan arus yang lebih besar dibanding BJT gan :D

mari di ORDER !!!! :D

DESCRIPTION:
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

FEATURES:
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- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive EC

Spesifikasi :
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- Package / Case : TO-220-3
- Number of Channels : 1 Channel
- Transistor Polarity : N-Channel
- Transistor Type : 1 N-Channel
- Vds - Drain-Source Breakdown Voltage : 100 V
- Id - Continuous Drain Current : 11 A
- Rds On - Drain-Source Resistance : 270 mOhms
- Vgs - Gate-Source Voltage : 20 V
- Maximum Operating Temperature : + 175 C
- Minimum Operating Temperature : - 55 C
- Fall Time : 20 ns
- Pd - Power Dissipation : 88 W
- Rise Time : 30 ns
- Typical Turn-Off Delay Time : 19 ns
- Typical Turn-On Delay Time : 8.8 ns